Spice modeling of 4H-SiC MOSFET based on advanced mobility model

Spice modeling of 4H-SiC MOSFET based on advanced mobility model has been developed. This modeling employs the Spice Level-1 model of MOSFET, but the constant mobility in the current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of 4H-SiC/SiO2 interface features on the characteristics of 4H-SiC MOSFET. The transfer characteristics of the developed 4H-SiC MOSFET model have been verified by the production datasheet, and the dynamic characteristics have been experimentally verified in DC/DC Boost converter. Based on the developed 4H-SiC MOSFET model, the effect of 4H-SiC/SiO2 interface trap and surface roughness on the dynamic characteristics of 4H-SiC MOSFET has been discussed. The results show that the switching loss increases with the increase in interface trap density, but surface roughness exists little impact on switching characteristics. The achieved results are very helpful to device application and device process.